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650V Super Junction N-Channel MOSFET

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.

Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.

About Us
Company History Honor Compliance Newpros

Products
Automotive Rectifier Protection Diode Small Signal Mosfet IGBT Module Press-pack Device SiC 4/5″wafer 6″wafer Integrated circuit

Application
Automotive Clean Energy Industrial Power Supply Home Appliance Security Smart Meter Telecommunication

Quality
Technical Resources Quality Document Reliability Test PCN/EOL Event

Investment
Overview Reports Stock market GDR OFFERING

Yangjie Technology SZ300373

11.88

▼RMB

2023-03-24 15:59:10

Tel： 400 106 0780(8:00~12:00 13:30~17:30)

E-mail： yangjie@21yangjie.com

Address： 6 Heye West Road, Hanjiang District, Yangzhou

WeChat QR code

?2023 Yangzhou Yangjie Electronic Technology Co.,Ltd. 蘇ICP備12043831號-1

蘇公網安備 32100302010286號

Automotive

Rectifier

Bridge Rectifier
Standard
Recovery Rectifier
Fast Recovery Rectifier
High Efficient Rectifier
Super Fast
Recovery Rectifier
Schottky Barrier
Rectifier
PV Diode

Automotive Rectifier
Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Rectifier Diode Fast Recovery Rectifier Diode Schottky Diode

Protection Diode

Transient Voltage
Suppressor
Thyristor Surge
Suppressor
ESD Protection Diode
Zener Diode

Thyristor
Uni-directional Thyristor Bi-directional Thyristor

Automotive Protection
Diode
Transient Voltage
Suppressor ESD Protection Diode Power Zener Diode

Uni-directional Thyristor Bi-directional Thyristor

Transient Voltage
Suppressor ESD Protection Diode Power Zener Diode

Small Signal

Small Signal
Switching Diode Small Signal
Schottky Diode Small Signal Zener Diode Small Signal Transisitor Power Transistor Small Signal Digital
Transisitor

MOSFET

ALL MOSFET
Automotive MOSFET

High-voltage
MOSFET(500V-1000V)
SJ MOSFET SiC MOSFET Planar MOSFET

Low & Medium Voltage
MOSFET(12V-400V)
N-Channel MOSFET P-Channel MOSFET

NP MOSFET(12V-300V)
Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

SJ MOSFET SiC MOSFET Planar MOSFET

N-Channel MOSFET P-Channel MOSFET

Complementary MOSFET Dual N-Channel MOSFET Dual P-Channel MOSFET Half-bridge MOSFET

SiC

SiC Schottky Diode
SiC MOSFET
SiC Schottky
Diode Modules
SiC MOSFET
Modules
SiC Automotive
Schottky Diode
SiC Automotive
MOSFET

IGBT

IGBT Module
IGBT Discrete
IGBT Automotive

Module

Rectifier Diodes Module
Fast Recovery Module
Schottky Module
Thyristor Module
Thyristor / Rectifier
Diode Module
Crimped Diode Module
Crimped Thyristor Module
Crimped Thyristor/Diode Module

Press-pack Device

Phase Control
Thyristor
Fast Switching
Thyristor
Bi-directional Thyristor
General Rectifier
Diode
Fast Recovery Diode
Welding Diode

4/5″wafer

STD Chip
FRD Chip
EPI Chip
TVS Chip
HVB High Voltage
Module Chip
Automotive
Electronics Chip

6″wafer

TSBD Chip
PSBD Chip
FRED Chip
LBD Chip
PMBD Chip
ESD Chip

Integrated circuit

LOAD Switches
LDO
Shunt Regulator
DC-DC